FET, MOSFET Arrays

制造商 Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GCMX010A120B2B1P

GCMX010A120B2B1P

MOSFET 2N-CH 1200V 214A

SemiQ

28
RFQ
GCMX010A120B2B1P Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 214A (Tc) 12mOhm @ 100A, 20V 4V @ 40mA 476nC @ 20V 13100pF @ 800V 750W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX080A120B2H1P

GCMX080A120B2H1P

MOSFET 4N-CH 1200V 27A

SemiQ

13
RFQ
GCMX080A120B2H1P Datasheet - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 27A (Tc) 100mOhm @ 20A, 20V 4V @ 10mA 56nC @ 20V 1362pF @ 800V 119W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX040A120B2H1P

GCMX040A120B2H1P

MOSFET 4N-CH 1200V 56A

SemiQ

7
RFQ
GCMX040A120B2H1P Datasheet - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 56A (Tc) 52mOhm @ 40A, 20V 4V @ 10mA 121nC @ 20V 3200pF @ 800V 217W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX020A120B2B1P

GCMX020A120B2B1P

MOSFET 2N-CH 1200V 102A

SemiQ

20
RFQ
GCMX020A120B2B1P Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 102A (Tc) 28mOhm @ 50A, 20V 4V @ 20mA 241nC @ 20V 6500pF @ 800V 385W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX040A120B3H1P

GCMX040A120B3H1P

MOSFET 4N-CH 1200V 53A

SemiQ

17
RFQ
GCMX040A120B3H1P Datasheet - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 53A (Tc) 52mOhm @ 40A, 20V 4V @ 10mA 125nC @ 20V 3200pF @ 800V 208W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX020A120B2H1P

GCMX020A120B2H1P

MOSFET 4N-CH 1200V 102A

SemiQ

10
RFQ
GCMX020A120B2H1P Datasheet - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 102A (Tc) 28mOhm @ 50A, 20V 4V @ 20mA 222nC @ 20V 5600pF @ 800V 333W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX010A120B3B1P

GCMX010A120B3B1P

MOSFET 2N-CH 1200V 173A

SemiQ

9
RFQ
GCMX010A120B3B1P Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 173A (Tc) 14mOhm @ 100A, 20V 4V @ 40mA 483nC @ 20V 13800pF @ 800V 577W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX020A120B3H1P

GCMX020A120B3H1P

MOSFET 4N-CH 1200V 93A

SemiQ

4
RFQ
GCMX020A120B3H1P Datasheet - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 93A (Tc) 28mOhm @ 50A, 20V 4V @ 20mA 250nC @ 20V 6700pF @ 800V 300W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX005A120B3B1P

GCMX005A120B3B1P

MOSFET 4N-CH 1200V 383A

SemiQ

2
RFQ
GCMX005A120B3B1P Datasheet - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Half Bridge) - 1200V (1.2kV) 383A (Tc) 7mOhm @ 200A, 20V 4V @ 80mA 927nC @ 20V 23500pF @ 800V 1.154kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX005A120S7B1

GCMX005A120S7B1

MOSFET 2N-CH 1200V 348A

SemiQ

20
RFQ
GCMX005A120S7B1 Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 348A (Tc) 7mOhm @ 200A, 20V 4V @ 80mA 978nC @ 20V 29300pF @ 800V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
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