FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GT025N06ATN60V, 170A,RD<2.5M@10V,VTH1.2V~2 Goford Semiconductor |
8 | - |
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Datasheet
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SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 170A (Tc) | 4.5V, 10V | 2.5mOhm @ 20A, 10V | 2.5V @ 250µA | 70 nC @ 10 V | ±20V | 4954 pF @ 30 V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT035N10TN100V,190A,RD<3.5M@10V,VTH2.0V~4 Goford Semiconductor |
23 | - |
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Datasheet
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- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 190A (Tc) | 10V | 3.5mOhm @ 20A, 10V | 4V @ 250µA | 68 nC @ 10 V | ±20V | 6057 pF @ 50 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT042P06MMOSFET P-CH 60V 160A 280W 4.5M(M Goford Semiconductor |
2,197 | - |
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SGT | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 160A (Tc) | 10V | 4.5mOhm @ 15A, 10V | 3V @ 250µA | 305 nC @ 10 V | 20V | 9389 pF @ 30 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - | |
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GT070N15QMOSFET N-CH 150V 155A 330W 5.8M( Goford Semiconductor |
2,946 | - |
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- |
SGT | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 155A (Tc) | 10V | 5.8mOhm @ 40A, 10V | 4V @ 250µA | 89 nC @ 10 V | 20V | 5840 pF @ 75 V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - | |
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GT016N10QMOSFET N-CH 100V 228A TO-247 Goford Semiconductor |
25 | - |
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Datasheet
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- | - | Tube | Active | - | MOSFET (Metal Oxide) | - | 228A (Tc) | 10V | 2.2mOhm @ 20A, 10V | 4.5V @ 250µA | 165 nC @ 10 V | ±20V | 9530 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-247-3 |
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GT095N10KMOSFET N-CH 100V 55A TO-252 Goford Semiconductor |
3,113 | - |
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Datasheet
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SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 55A (Tc) | 4.5V, 10V | 10.5mOhm @ 35A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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GS120R045Q4SiC MOSFET N-CH 1200V 60A TO-24 Goford Semiconductor |
4,923 | - |
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Datasheet
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- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 18V | 52mOhm @ 20A, 18V | 4V @ 10mA | - | -10V, +20V | 2565 pF @ 1000 V | - | 395W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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GS65R038Q4SiC MOSFET N-CH 650V 60A TO-247 Goford Semiconductor |
6,522 | - |
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Datasheet
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- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 60A (Tc) | 18V | 49mOhm @ 30A, 18V | 4V @ 10mA | - | -10V, +20V | 1480 pF @ 1000 V | - | 395W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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