Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Diode Configuration | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Grade | Qualification | Mounting Type | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MBR2X060A045DIODE MOD SCHOTT 45V 120A SOT227 GeneSiC Semiconductor |
9,257 |
|
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- | SOT-227-4, miniBLOC | Bulk | Active | 2 Independent | Schottky | 45 V | 120A | 700 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 45 V | -40°C ~ 150°C | - | - | Chassis Mount | SOT-227 |
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MUR2X100A02DIODE MODULE GP 200V 100A SOT227 GeneSiC Semiconductor |
9,778 |
|
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- | SOT-227-4, miniBLOC | Bulk | Active | 2 Independent | Standard | 200 V | 100A | 1 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 200 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
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MBR2X100A180DIODE MOD SCHOT 180V 100A SOT227 GeneSiC Semiconductor |
3,119 |
|
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- | SOT-227-4, miniBLOC | Bulk | Active | 2 Independent | Schottky | 180 V | 100A | 920 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3 mA @ 180 V | -40°C ~ 150°C | - | - | Chassis Mount | SOT-227 |
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MBR400100CTRDIODE MOD SCHOT 100V 200A 2TOWER GeneSiC Semiconductor |
3,838 |
|
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- | Twin Tower | Bulk | Active | 1 Pair Common Anode | Schottky, Reverse Polarity | 100 V | 200A | 840 mV @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
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MBRT40045DIODE MOD SCHOTT 45V 200A 3TOWER GeneSiC Semiconductor |
8,428 |
|
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- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Schottky | 45 V | 200A | 750 mV @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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GE2X10MPS06DDIODE ARRAY SIC 650V 23A TO247-3 GeneSiC Semiconductor |
8,473 |
|
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SiC Schottky MPS™ | TO-247-3 | Tube | Obsolete | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 650 V | 23A (DC) | - | No Recovery Time > 500mA (Io) | - | - | -55°C ~ 175°C | - | - | Through Hole | TO-247-3 |
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GB10SLT12-247DDIODE ARRAY SIC 1200V 12A TO-247 GeneSiC Semiconductor |
7,263 |
|
- |
- | TO-247-3 | Tube | Obsolete | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 1200 V | 12A | 1.9 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 1200 V | -55°C ~ 175°C | - | - | Through Hole | TO-247 |
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GC2X5MPS12-247DIODE ARR SIC 1200V 27A TO247-3 GeneSiC Semiconductor |
9,793 |
|
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SiC Schottky MPS™ | TO-247-3 | Tube | Obsolete | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 1200 V | 27A (DC) | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 4 µA @ 1200 V | -55°C ~ 175°C | - | - | Through Hole | TO-247-3 |
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GD2X10MPS12DDIODE ARR SIC 1200V 25A TO247-3 GeneSiC Semiconductor |
3,306 |
|
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MPS™ | TO-247-3 | Tube | Active | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 1200 V | 25A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 1200 V | -55°C ~ 175°C | - | - | Through Hole | TO-247-3 |
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GC2X8MPS12-247DIODE ARR SIC 1200V 40A TO247-3 GeneSiC Semiconductor |
7,359 |
|
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SiC Schottky MPS™ | TO-247-3 | Tube | Obsolete | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 1200 V | 40A (DC) | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 7 µA @ 1200 V | -55°C ~ 175°C | - | - | Through Hole | TO-247-3 |