Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT60D120BGDIODE GP 1.2KV 60A TO247 Microchip Technology |
955 |
|
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- | TO-247-2 | Tube | Active | Standard | 1200 V | 60A | 2.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
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APT60S20BGDIODE SCHOTTKY 200V 75A TO247 Microchip Technology |
538 |
|
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- | TO-247-2 | Tube | Active | Schottky | 200 V | 75A | 900 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 1 mA @ 200 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 150°C |
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1N5712-1DIODE SCHOTTKY 20V 75MA DO35 Microchip Technology |
1,793 |
|
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- | DO-204AH, DO-35, Axial | Bulk | Active | Schottky | 20 V | 75mA | 1 V @ 35 mA | Small Signal =< 200mA (Io), Any Speed | - | 150 nA @ 16 V | 2pF @ 0V, 1MHz | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
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1N5615DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
270 |
|
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- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 200 V | 45pF @ 12V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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1N5417DIODE GEN PURP 200V 3A B AXIAL Microchip Technology |
1,183 |
|
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- | Axial | Bulk | Active | Standard | 200 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
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JANTX1N5615DIODE GEN PURP 200V 1A A-PAK Microchip Technology |
2,371 |
|
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- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 200 V | 45pF @ 12V, 1MHz | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
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1N5552DIODE GEN PURP 600V 3A AXIAL Microchip Technology |
911 |
|
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- | B, Axial | Bulk | Active | Standard | 600 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
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APT100S20BGDIODE SCHOTTKY 200V 120A TO247 Microchip Technology |
3,777 |
|
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- | TO-247-2 | Tube | Active | Schottky | 200 V | 120A | 950 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 70 ns | 2 mA @ 200 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 150°C |
|
1N5712DIODE SCHOTTKY 20V 75MA DO35 Microchip Technology |
529 |
|
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- | DO-204AH, DO-35, Axial | Bulk | Active | Schottky | 20 V | 75mA | 1 V @ 35 mA | Small Signal =< 200mA (Io), Any Speed | - | 150 nA @ 16 V | 2pF @ 0V, 1MHz | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
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1N5806USDIODE GEN PURP 150V 1A D-5A Microchip Technology |
72,209 |
|
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- | SQ-MELF, A | Bulk | Active | Standard | 150 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | - | - | Surface Mount | D-5A | -65°C ~ 175°C |