Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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UPR60E3/TR7DIODE GEN PURP 600V 2A POWERMITE Microchip Technology |
8,710 |
|
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- | DO-216AA | Tape & Reel (TR) | Active | Standard | 600 V | 2A | 1.6 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 1 µA @ 600 V | - | - | - | Surface Mount | Powermite | -55°C ~ 150°C |
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APT60DQ120BGDIODE GP 1.2KV 60A TO247 Microchip Technology |
194 |
|
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- | TO-247-2 | Tube | Active | Standard | 1200 V | 60A | 3.3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 320 ns | 100 µA @ 1200 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
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APT30D120BGDIODE GEN PURP 1.2KV 30A TO247 Microchip Technology |
180 |
|
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- | TO-247-2 | Tube | Active | Standard | 1200 V | 30A | 2.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 370 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
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APT30S20BGDIODE SCHOTTKY 200V 45A TO247 Microchip Technology |
228 |
|
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- | TO-247-2 | Tube | Active | Schottky | 200 V | 45A | 850 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 500 µA @ 200 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 150°C |
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APT30D20BGDIODE GP 200V 30A TO247 Microchip Technology |
141 |
|
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- | TO-247-2 | Tube | Active | Standard | 200 V | 30A | 1.3 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 24 ns | 250 µA @ 200 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
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APT30D100BGDIODE GEN PURP 1KV 30A TO247 Microchip Technology |
710 |
|
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- | TO-247-2 | Tube | Active | Standard | 1000 V | 30A | 2.3 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 290 ns | 250 µA @ 1000 V | - | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
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APT60D40BGDIODE GP 400V 60A TO247 Microchip Technology |
439 |
|
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- | TO-247-2 | Tube | Active | Standard | 400 V | 60A | 1.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 37 ns | 250 µA @ 400 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
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1N5618DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
267 |
|
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- | A, Axial | Bulk | Active | Standard | 600 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 600 V | - | - | - | Through Hole | A, Axial | -65°C ~ 200°C |
|
JAN1N5617DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
177 |
|
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- | A, Axial | Bulk | Active | Standard | 400 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 400 V | - | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
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1N5620DIODE GEN PURP 800V 1A AXIAL Microchip Technology |
300 |
|
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- | A, Axial | Bulk | Active | Standard | 800 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 800 V | - | - | - | Through Hole | A, Axial | -65°C ~ 200°C |