Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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VS-8EWF06S-M3DIODE GEN PURP 600V 8A DPAK Vishay General Semiconductor - Diodes Division |
2,573 |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | Standard | 600 V | 8A | 1.2 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 100 µA @ 600 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -40°C ~ 150°C |
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VS-E5TH3012-M3DIODE GEN PURP 1.2KV 30A TO220AC Vishay General Semiconductor - Diodes Division |
5,292 |
|
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FRED Pt® | TO-220-2 | Tube | Active | Standard | 1200 V | 30A | 2.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 58 ns | 50 µA @ 1200 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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VS-20ETS12FP-M3DIODE GP 1.2KV 20A TO220-2FP Vishay General Semiconductor - Diodes Division |
1,182 |
|
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- | TO-220-2 Full Pack | Tube | Active | Standard | 1200 V | 20A | 1.3 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 95 ns | 100 µA @ 1200 V | - | - | - | Through Hole | TO-220-2 Full Pack | -40°C ~ 150°C |
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VS-20ETF12-M3DIODE GEN PURP 1.2KV 20A TO220AC Vishay General Semiconductor - Diodes Division |
7,985 |
|
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- | TO-220-2 | Tube | Active | Standard | 1200 V | 20A | 1.31 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 100 µA @ 1200 V | - | - | - | Through Hole | TO-220AC | -40°C ~ 150°C |
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VS-20ETF12S-M3DIODE GEN PURP 1.2KV 20A TO263AB Vishay General Semiconductor - Diodes Division |
9,217 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Standard | 1200 V | 20A | 1.31 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 100 µA @ 1200 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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VS-8EWF12STR-M3DIODE GEN PURP 1.2KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
5,847 |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | Standard | 1200 V | 8A | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 270 ns | 100 µA @ 1200 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -40°C ~ 150°C |
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VS-8EWF06STR-M3DIODE GEN PURP 600V 8A D-PAK Vishay General Semiconductor - Diodes Division |
1,511 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | Standard | 600 V | 8A | 1.2 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 100 µA @ 600 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -40°C ~ 150°C |
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VS-8EWF12S-M3DIODE GEN PURP 1.2KV 8A TO252 Vishay General Semiconductor - Diodes Division |
1,812 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | Standard | 1200 V | 8A | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 270 ns | 100 µA @ 1200 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -40°C ~ 150°C |
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VS-20ETF06FP-M3DIODE GP 600V 20A TO220-2FP Vishay General Semiconductor - Diodes Division |
1,061 |
|
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- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 20A | 1.67 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 160 ns | 100 µA @ 600 V | - | - | - | Through Hole | TO-220-2 Full Pack | -40°C ~ 150°C |
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VS-EPU6006LHN3DIODE GEN PURP 600V 60A TO247AD Vishay General Semiconductor - Diodes Division |
895 |
|
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FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 1.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 110 ns | 30 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |