制造商 | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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WNSC208006QDIODE SCHOTTKY TO220-2L WeEn Semiconductors |
9,502 | - |
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 800 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 450 µA @ 800 V | 655pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C |
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WNSC5D04650D6JDIODE SIL CARBIDE 650V 4A DPAK WeEn Semiconductors |
6,611 | - |
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- |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 138pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |