制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
G1K1P06LHMOSFET P-CH 60V 4.5A 3.1W SOT-2 Goford Semiconductor |
3,000 | - |
|
![]() |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 4.5A (Tc) | 10V | 110mOhm @ -3A,- 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 970 pF @ 30 V | - | 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
![]() |
GT800N10LMOSFET N-CH 100V 3.5A SOT-23-3L Goford Semiconductor |
2,598 | - |
|
![]() |
SGT | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 3.5A (Tc) | 4.5V, 10V | 80mOhm @ 2A, 10V | 3V @ 250µA | 5 nC @ 10 V | ±20V | 209 pF @ 50 V | - | 1.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
![]() |
G45P40TMOSFET P-CH 40V 45A TO-220 Goford Semiconductor |
13,000 | - |
|
![]() |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | - | 45A (Tc) | 4.5V, 10V | 16mOhm @ 30A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 80W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
![]() |
G250N03IEN30V,ESD 5.3A,RD<25M@10V,VTH0.5V Goford Semiconductor |
2,573 | - |
|
![]() |
TrenchFET® | SOT-23-6 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.3A (Tc) | 2.5V, 10V | 25mOhm @ 4A, 10V | 1.3V @ 250µA | 9.1 nC @ 4.5 V | ±10V | 573 pF @ 15 V | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-6L |
![]() |
3400N30V,RD(MAX)<27M@10V,RD(MAX)<33M Goford Semiconductor |
4,484 | - |
|
![]() |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.6A (Tc) | 4.5V, 10V | 27mOhm @ 3A, 10V | 1.3V @ 250µA | 16 nC @ 4.5 V | ±12V | 552 pF @ 15 V | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23 |
![]() |
G9435SP-30V,-5.1A,RD(MAX)<55M@-10V,VTH Goford Semiconductor |
3,890 | - |
|
![]() |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 5.1A (Tc) | 4.5V, 10V | 55mOhm @ 5.1A, 10V | 3V @ 250µA | 12 nC @ 10 V | ±20V | 1040 pF @ 15 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
![]() |
2301P20V,RD(MAX)<[email protected],RD(MAX)<8 Goford Semiconductor |
3,793 | - |
|
![]() |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Tc) | 2.5V, 4.5V | 56mOhm @ 1.7A, 4.5V | 900mV @ 250µA | 8.5 nC @ 2.5 V | ±12V | 640 pF @ 10 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23 |
![]() |
G5N02LN20V, 5A, RD<18M@10V,VTH0.4V~1.0 Goford Semiconductor |
3,000 | - |
|
![]() |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 5A (Tc) | 2.5V, 10V | 18mOhm @ 4.2A, 10V | 1V @ 250µA | 11 nC @ 4.5 V | ±12V | 780 pF @ 10 V | - | 1.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
![]() |
G350P02LLEP-20V,-8.2A,RD(MAX)<[email protected],V Goford Semiconductor |
2,985 | - |
|
![]() |
TrenchFET® | SOT-23-6 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.5A (Tc) | 1.8V, 4.5V | 35mOhm @ 4A, 4.5V | 1V @ 250µA | 17.2 nC @ 10 V | ±10V | 1126 pF @ 10 V | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-6L |
![]() |
GT6K2P10IHMOSFET P-CH 100V 1A SOT-23 Goford Semiconductor |
1,713 | - |
|
![]() |
SGT | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Tc) | 10V | 670mOhm @ 1A, 10V | 3V @ 250µA | 10 nC @ 10 V | ±20V | 253 pF @ 50 V | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |