制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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IPA80R1K4P7XKSA1MOSFET N-CH 800V 4A TO220-3F Infineon Technologies |
995 | - |
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CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | 3.5V @ 700µA | 10 nC @ 10 V | ±20V | 250 pF @ 500 V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
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IPP80R1K4P7XKSA1MOSFET N-CH 800V 4A TO220-3 Infineon Technologies |
499 | - |
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CoolMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | 3.5V @ 70µA | 10 nC @ 10 V | ±20V | 250 pF @ 500 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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BSC020N03LSGATMA1MOSFET N-CH 30V 28A/100A TDSON Infineon Technologies |
17,249 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 28A (Ta), 100A (Tc) | 4.5V, 10V | 2mOhm @ 30A, 10V | 2.2V @ 250µA | 93 nC @ 10 V | ±20V | 7200 pF @ 15 V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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IPD60R600P6ATMA1MOSFET N-CH 600V 7.3A TO252-3 Infineon Technologies |
4,896 | - |
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CoolMOS™ P6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12 nC @ 10 V | ±20V | 557 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPAN60R360PFD7SXKSA1MOSFET N-CH 650V 10A TO220 Infineon Technologies |
534 | - |
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CoolMOS™PFD7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 360mOhm @ 2.9A, 10V | 4.5V @ 140µA | 12.7 nC @ 10 V | ±20V | 534 pF @ 400 V | - | 23W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPD18DP10LMATMA1TRENCH >=100V PG-TO252-3 Infineon Technologies |
2,081 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 2.5A (Ta), 13.9A (Tc) | 4.5V, 10V | 178mOhm @ 13A, 10V | 2V @ 1.04mA | 42 nC @ 10 V | ±20V | 2100 pF @ 50 V | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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ISZ0602NLSATMA1MOSFET N-CH 80V 12A/64A TSDSON Infineon Technologies |
9,817 | - |
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OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 12A (Ta), 64A (Tc) | 4.5V, 10V | 7.8mOhm @ 20A, 10V | 2.3V @ 29µA | 29 nC @ 10 V | ±20V | 1860 pF @ 40 V | - | 2.1W (Ta), 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-26 |
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ISZ019N03L5SATMA1MOSFET N-CH 30V 22A/40A TSDSON Infineon Technologies |
7,128 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta), 40A (Tc) | 4.5V, 10V | 1.9mOhm @ 20A, 10V | 2V @ 250µA | 44 nC @ 10 V | ±20V | 2800 pF @ 15 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-FL |
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IPD096N08N3GATMA1MOSFET N-CH 80V 73A TO252-3 Infineon Technologies |
2,463 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 73A (Tc) | 6V, 10V | 9.6mOhm @ 46A, 10V | 3.5V @ 46µA | 35 nC @ 10 V | ±20V | 2410 pF @ 40 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD60R600C6ATMA1MOSFET N-CH 600V 7.3A TO252-3 Infineon Technologies |
8,732 | - |
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CoolMOS™ C6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |