制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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BSZ0901NSATMA1MOSFET N-CH 30V 22A/40A 8TSDSON Infineon Technologies |
3,456 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta), 40A (Tc) | 4.5V, 10V | 2mOhm @ 20A, 10V | 2.2V @ 250µA | 45 nC @ 10 V | ±20V | 2850 pF @ 15 V | - | 2.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8 |
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IRFR2405TRLPBFMOSFET N-CH 55V 56A DPAK Infineon Technologies |
3,334 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 56A (Tc) | 10V | 16mOhm @ 34A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2430 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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BSC0901NSIATMA1MOSFET N-CH 30V 28A/100A TDSON Infineon Technologies |
556 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 28A (Ta), 100A (Tc) | 4.5V, 10V | 2mOhm @ 30A, 10V | 2.2V @ 250µA | 20 nC @ 15 V | ±20V | 2600 pF @ 15 V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-6 |
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SPD03N60C3ATMA1MOSFET N-CH 600V 3.2A TO252-3 Infineon Technologies |
17,260 | - |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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ISC011N03L5SATMA1MOSFET N-CH 30V 37A/100A TDSON Infineon Technologies |
15,000 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 37A (Ta), 100A (Tc) | 4.5V, 10V | 1.1mOhm @ 30A, 10V | 2V @ 250µA | 72 nC @ 10 V | ±20V | 4700 pF @ 15 V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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IPD60N10S412ATMA1MOSFET N-CH 100V 60A TO252-3 Infineon Technologies |
5,719 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 10V | 12.2mOhm @ 60A, 10V | 3.5V @ 46µA | 34 nC @ 10 V | ±20V | 2470 pF @ 25 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-313 |
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IPD30N06S215ATMA2MOSFET N-CH 55V 30A TO252-31 Infineon Technologies |
6,559 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | 10V | 14.7mOhm @ 30A, 10V | 4V @ 80µA | 110 nC @ 10 V | ±20V | 1485 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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BSZ084N08NS5ATMA1MOSFET N-CH 80V 40A TSDSON Infineon Technologies |
34,017 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 40A (Tc) | 6V, 10V | 8.4mOhm @ 20A, 10V | 3.8V @ 31µA | 25 nC @ 10 V | ±20V | 1820 pF @ 40 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-FL |
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IPD80R750P7ATMA1MOSFET N-CH 800V 7A TO252-3 Infineon Technologies |
4,134 | - |
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CoolMOS™ P7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 750mOhm @ 2.7A, 10V | 3.5V @ 140µA | 17 nC @ 10 V | ±20V | 460 pF @ 500 V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD60R280PFD7SAUMA1MOSFET N-CH 600V 12A TO252-3 Infineon Technologies |
2,879 | - |
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CoolMOS™ PFD7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 280mOhm @ 3.6A, 10V | 4.5V @ 180µA | 15.3 nC @ 10 V | ±20V | 656 pF @ 400 V | - | 51W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3-344 |