FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TSM80N1R2CI C0GMOSFET N-CH 800V 5.5A ITO220AB Taiwan Semiconductor Corporation |
7,360 | - |
|
- |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.5A (Tc) | 10V | 1.2Ohm @ 1.8A, 10V | 4V @ 250µA | 19.4 nC @ 10 V | ±30V | 685 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220AB |
|
|
TSM80N950CI C0GMOSFET N-CH 800V 6A ITO220AB Taiwan Semiconductor Corporation |
2,369 | - |
|
- |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 950mOhm @ 2A, 10V | 4V @ 250µA | 19.6 nC @ 10 V | ±30V | 691 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220AB |
|
TSM035NB04LCZ40V, 157A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
9,964 | - |
|
- |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 18A (Ta), 157A (Tc) | 4.5V, 10V | 3.5mOhm @ 18A, 10V | 2.5V @ 250µA | 111 nC @ 10 V | ±20V | 6350 pF @ 20 V | - | 2W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
|
TSM60NB600CP600V, 7A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
4,384 | - |
|
- |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±30V | 516 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
|
TSM60NB600CH600V, 7A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
6,031 | - |
|
- |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±30V | 516 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
|
TSM60N380CH C5GMOSFET N-CH 600V 11A TO251 Taiwan Semiconductor Corporation |
3,773 | - |
|
- |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 20.5 nC @ 10 V | ±30V | 1040 pF @ 100 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
|
|
TSM80N1R2CL C0GMOSFET N-CH 800V 5.5A TO262S Taiwan Semiconductor Corporation |
2,613 | - |
|
- |
- | TO-262-3 Short Leads, I2PAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.5A (Tc) | 10V | 1.2Ohm @ 1.8A, 10V | 4V @ 250µA | 19.4 nC @ 10 V | ±30V | 685 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262S (I2PAK) |
.jpg)
|
TSM70N10CP ROGMOSFET N-CHANNEL 100V 70A TO252 Taiwan Semiconductor Corporation |
7,867 | - |
|
- |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 10V | 13mOhm @ 30A, 10V | 4V @ 250µA | 145 nC @ 10 V | ±20V | 4300 pF @ 30 V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
|
TSM043NB04LCZ40V, 124A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
7,567 | - |
|
- |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 16A (Ta), 124A (Tc) | 4.5V, 10V | 4.3mOhm @ 16A, 10V | 2.5V @ 250µA | 76 nC @ 10 V | ±20V | 4387 pF @ 20 V | - | 2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
TSM10N80CZ C0GMOSFET N-CH 800V 9.5A TO220 Taiwan Semiconductor Corporation |
3,878 | - |
|
- |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 9.5A (Tc) | 10V | 1.05Ohm @ 4.75A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 2336 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
- 1500+ Daily average RFQ Volume
- 20,000.000 Standard Product Unit
- 1800+ Worldwide Manufacturers
- 15,000+ In-stock Warehouse
