Taiwan Semiconductor Corporation TSM10N80CZ C0G
- Part No.:
- TSM10N80CZ C0G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Description:
- MOSFET N-CH 800V 9.5A TO220
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
TSM10N80CZ C0G Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.05Ohm @ 4.75A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 53 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2336 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 290W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
| Image |  |
| Part Number | TSM10N80CZ C0G |
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | - |
| Package/Case | TO-220-3 |
| Packaging | Tube |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 4.75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2336 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 290W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
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