FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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应用所有
结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CC-CL-75-1023SiC MOSFET 33A 1200V TO-247-3 CoolCAD |
995 | - |
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Datasheet
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- | TO-247-3 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 33A | 15V, 20V | 70mOhm @ 10A, 20V | 2.9V @ 10mA | 90 nC @ 18 V | +20V, -5V | 930 pF @ 1000 V | - | 135W | 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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CC-C2-B15-0322SiC Power MOSFET 1200V 12A CoolCAD |
30 | - |
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Datasheet
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- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 12A (Ta) | 15V | 135mOhm @ 10A, 15V | 3.2V @ 5mA | 40 nC @ 15 V | +15V, -5V | 1810 pF @ 200 V | - | 100W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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CC-CN-23-0123SiC MOSFET 20A 1200V TO-247-3 CoolCAD |
15 | - |
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Datasheet
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- | TO-247-3 | Bulk | Active | - | SiCFET (Silicon Carbide) | - | 20A (Ta) | - | 85mOhm @ 10A, 15V | 2.4V @ 5mA | 16 nC @ 5 V | - | 810 pF @ 200 V | - | - | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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