CoolCAD CC-C2-B15-0322
- Part No.:
- CC-C2-B15-0322
- Manufacturer:
- CoolCAD
- Category:
- FETs, MOSFETs
- Package:
- TO-247-4
- Datasheet:
-
CC-C2-B15-0322.pdf
- Description:
- SiC Power MOSFET 1200V 12A
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
CC-C2-B15-0322 Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- CoolCAD
- Series:
- -
- Package/Case:
- TO-247-4
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 1200 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 15V
- Rds On (Max) @ Id, Vgs:
- 135mOhm @ 10A, 15V
- Vgs(th) (Max) @ Id:
- 3.2V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 15 V
- Vgs (Max):
- +15V, -5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1810 pF @ 200 V
- FET Feature:
- -
- Power Dissipation (Max):
- 100W (Tc)
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247
- Datasheet:
-
CC-C2-B15-0322.pdf
| Image |  |
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| Part Number | CC-CL-75-1023 | CC-C2-B15-0322 | CC-CN-23-0123 |
| Manufacturer | CoolCAD | CoolCAD | CoolCAD |
| Series | - | - | - |
| Package/Case | TO-247-3 | TO-247-4 | TO-247-3 |
| Packaging | Bulk | Bulk | Bulk |
| Product Status | Active | Active | Active |
| FET Type | N-Channel | N-Channel | - |
| Technology | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V | 1200 V | - |
| Current - Continuous Drain (Id) @ 25°C | 33A | 12A (Ta) | 20A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V | 15V | - |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 10A, 20V | 135mOhm @ 10A, 15V | 85mOhm @ 10A, 15V |
| Vgs(th) (Max) @ Id | 2.9V @ 10mA | 3.2V @ 5mA | 2.4V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 18 V | 40 nC @ 15 V | 16 nC @ 5 V |
| Vgs (Max) | +20V, -5V | +15V, -5V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 930 pF @ 1000 V | 1810 pF @ 200 V | 810 pF @ 200 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 135W | 100W (Tc) | - |
| Operating Temperature | 175°C (TJ) | -40°C ~ 175°C (TJ) | -40°C ~ 175°C (TJ) |
| Grade | - | - | - |
| Qualification | - | - | - |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-247-3 | TO-247 | TO-247-3 |
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- RTQ035N03HZGTR Rohm Semiconductor TO-247-4 SiC Power MOSFET 1200V 12A
- FDMS7680 onsemi TO-247-4 SiC Power MOSFET 1200V 12A
- RQ3E180BNTB Rohm Semiconductor TO-247-4 SiC Power MOSFET 1200V 12A
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