Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5711-1DIODE SCHOTTKY 70V 33MA DO35 Microchip Technology |
836 |
|
![]() |
- | DO-204AH, DO-35, Axial | Bulk | Active | Schottky | 70 V | 33mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
1N5553DIODE GEN PURP 800V 3A AXIAL Microchip Technology |
251 |
|
![]() |
- | B, Axial | Bulk | Active | Standard | 800 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 800 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
![]() |
1N5551USDIODE GEN PURP 400V 3A D-5B Microchip Technology |
165 |
|
![]() |
- | SQ-MELF, E | Bulk | Active | Standard | 400 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 400 V | - | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
![]() |
MSC030SDA070BDIODE SIL CARBIDE 700V 60A TO247 Microchip Technology |
118 |
|
![]() |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 60A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 700 V | 1200pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
|
1N3595USDIODE GEN PURP 4A B SQ-MELF Microchip Technology |
158 |
|
![]() |
- | SQ-MELF, B | Bulk | Active | Standard | - | 4A | 1 V @ 200 mA | Standard Recovery >500ns, > 200mA (Io) | 3 µs | 1 nA @ 125 V | - | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 150°C |
|
CDLL5711DIODE SCHOTTKY 50V 33MA DO213AA Microchip Technology |
265 |
|
![]() |
- | DO-213AA | Bulk | Active | Schottky | 50 V | 33mA | 410 mV @ 1 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 150°C |
![]() |
1N5416USDIODE GEN PURP 100V 3A D-5B Microchip Technology |
111 |
|
![]() |
- | SQ-MELF, E | Bulk | Active | Standard | 100 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 100 V | - | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
![]() |
MSC030SDA120BDIODE SIL CARB 1.2KV 30A TO247 Microchip Technology |
1,046 |
|
![]() |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.5 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-247 | - |
![]() |
MSC020SDA120SDIODE SIL CARB 1.2KV 49A D3PAK Microchip Technology |
869 |
|
![]() |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 49A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1130pF @ 1V, 1MHz | - | - | Surface Mount | D3PAK | -55°C ~ 175°C |
|
JANTX1N5190DIODE GEN PURP 600V 3A AXIAL Microchip Technology |
189 |
|
![]() |
- | B, Axial | Bulk | Active | Standard | 600 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 2 µA @ 600 V | - | Military | MIL-PRF-19500/424 | Through Hole | B, Axial | - |