Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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MSC050SDA070BCTDIODE SIL CARB 700V 88A TO247-3 Microchip Technology |
274 |
|
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- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 88A | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 700 V | 2034pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
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UES1306HR2/TRDIODE GEN PURP 400V 5A B AXIAL Microchip Technology |
193 |
|
- |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 5A | 1 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 20 µA @ 400 V | - | - | - | Through Hole | B, Axial | - |
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UPR15E3/TR7DIODE GEN PURP 150V 2.5A DO216 Microchip Technology |
2,792 |
|
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- | DO-216AA | Tape & Reel (TR) | Active | Standard | 150 V | 2.5A | 975 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 150 V | - | - | - | Surface Mount | DO-216 | -55°C ~ 150°C |
|
UPS3100E3/TR13DIODE SCHOTTKY 100V 3A POWERMITE Microchip Technology |
9,241 |
|
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- | Powermite®3 | Tape & Reel (TR) | Active | Schottky | 100 V | 3A | 760 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 100 V | 85pF @ 4V, 1MHz | - | - | Surface Mount | Powermite 3 | -55°C ~ 125°C |
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LSM345J/TR13DIODE SCHOTTKY 45V 3A DO214AB Microchip Technology |
2,870 |
|
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- | DO-214AB, SMC | Tape & Reel (TR) | Active | Schottky | 45 V | 3A | 520 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 45 V | - | - | - | Surface Mount | DO-214AB | -55°C ~ 150°C |
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APT15D120KGDIODE GP 1.2KV 15A TO220 Microchip Technology |
255 |
|
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- | TO-220-3 | Tube | Active | Standard | 1200 V | 15A | 2.5 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 260 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-220 [K] | -55°C ~ 175°C |
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1N4938-1DIODE GEN PURP 175V 100MA DO35 Microchip Technology |
369 |
|
- |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 175 V | 100mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | 100 nA @ 175 V | - | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
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APT40DQ120SGDIODE GEN PURP 1.2KV 40A D3PAK Microchip Technology |
958 |
|
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- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | Standard | 1200 V | 40A | 3.4 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 350 ns | 100 µA @ 1200 V | - | - | - | Surface Mount | D3PAK | -55°C ~ 175°C |
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CDLL5818DIODE SCHOTTKY 30V 1A DO213AB Microchip Technology |
190 |
|
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- | DO-213AB, MELF | Bulk | Active | Schottky | 30 V | 1A | 600 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | 0.9pF @ 5V, 1MHz | - | - | Surface Mount | DO-213AB | -65°C ~ 150°C |
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1N5617E3DIODE GEN PURP 400V 1A A AXIAL Microchip Technology |
194 |
|
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- | A, Axial | Bag | Active | Standard | 400 V | 1A | 800 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 400 V | 35pF @ 12V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |