Microchip Technology 1N5617E3
- Part No.:
- 1N5617E3
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- A, Axial
- Datasheet:
-
1N5617E3.pdf
- Description:
- DIODE GEN PURP 400V 1A A AXIAL
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
1N5617E3 Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- A, Axial
- Packaging:
- Bag
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 400 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 800 mV @ 3 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 150 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 400 V
- Capacitance @ Vr, F:
- 35pF @ 12V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- A, Axial
- Operating Temperature - Junction:
- -65°C ~ 175°C
- Datasheet:
-
1N5617E3.pdf
| Image |  |
 |
| Part Number | 1N5617E3 | 1N5617E3/TR |
| Manufacturer | Microchip Technology | Microchip Technology |
| Series | - | - |
| Package/Case | A, Axial | A, Axial |
| Packaging | Bag | Tape & Reel (TR) |
| Product Status | Active | Active |
| Technology | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) | 400 V | 400 V |
| Current - Average Rectified (Io) | 1A | 1A |
| Voltage - Forward (Vf) (Max) @ If | 800 mV @ 3 A | 800 mV @ 3 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns | 150 ns |
| Current - Reverse Leakage @ Vr | 500 nA @ 400 V | 500 nA @ 400 V |
| Capacitance @ Vr, F | 35pF @ 12V, 1MHz | 35pF @ 12V, 1MHz |
| Grade | - | - |
| Qualification | - | - |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | A, Axial | A, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C | -65°C ~ 175°C |
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