Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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WNSC2D10650XQDIODE SIL CARB 650V 10A TO220F WeEn Semiconductors |
6,752 |
|
- |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 310pF @ 1V, 1MHz | - | - | Through Hole | TO-220F | 175°C |
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WNSC6D106506QWNSC6D10650/TO-220AC/STANDARD MA WeEn Semiconductors |
8,531 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.4 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C |
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WNSC6D10650B6JWNSC6D10650B/TO263/REEL 13" Q1/T WeEn Semiconductors |
6,070 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | -55°C ~ 175°C |
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WNSC6D10650X6QWNSC6D10650X/TO220F-2L/STANDARD WeEn Semiconductors |
2,760 |
|
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- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
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BYC30W-600PT2-AQBYC30W-600PT2-A/TO247-2L/STANDAR WeEn Semiconductors |
4,460 |
|
- |
- | TO-247-2 | Tube | Active | Standard | 600 V | 30A | 2.75 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 54 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | 175°C |
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BYC8B-600PJDIODE GEN PURP 600V 8A D2PAK WeEn Semiconductors |
3,091 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 8A | 3.4 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 18 ns | 20 µA @ 600 V | - | - | - | Surface Mount | D2PAK | 175°C (Max) |
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WB75FC120ALZWB75FC120AL/NAU000/NO MARK*CHIPS WeEn Semiconductors |
4,936 |
|
- |
- | Die | Bulk | Active | Standard | 1200 V | 75A | 3.3 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 85 ns | 250 µA @ 1200 V | - | - | - | Surface Mount | Wafer | 175°C |
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WNSC2D101200D6JWNSC2D101200D/TO252/REEL 13" Q1 WeEn Semiconductors |
2,159 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 481pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
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BYW29ED-200,118DIODE GEN PURP 200V 8A DPAK WeEn Semiconductors |
2,689 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | Standard | 200 V | 8A | 1.3 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 200 V | - | - | - | Surface Mount | DPAK | 150°C (Max) |
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WNSC6D10650T6JWNSC6D10650T/DFN8X8/REEL 13" Q1/ WeEn Semiconductors |
2,712 |
|
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- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | -55°C ~ 175°C |