Cambridge GaN Devices CGD65A055S2-T07

Part No.:
CGD65A055S2-T07
Manufacturer:
Cambridge GaN Devices
Category:
FETs, MOSFETs
Package:
16-PowerVDFN
Datasheet:
IC-MAX.COMCGD65A055S2-T07.pdf
Description:
650V GAN HEMT, 55MOHM, DFN8X8. W
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CGD65A055S2-T07 Information

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Manufacturer:
Cambridge GaN Devices
Series:
ICeGaN™
Package/Case:
16-PowerVDFN
Packaging:
Cut Tape (CT)
Product Status:
Active
FET Type:
-
Technology:
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
27A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
12V
Rds On (Max) @ Id, Vgs:
77mOhm @ 2.2A, 12V
Vgs(th) (Max) @ Id:
4.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:
6 nC @ 12 V
Vgs (Max):
+20V, -1V
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
Current Sensing
Power Dissipation (Max):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
16-DFN (8x8)
Datasheet:
IC-MAX.COMCGD65A055S2-T07.pdf
Image CGD65A055S2-T07
Part Number CGD65A055S2-T07
Manufacturer Cambridge GaN Devices
Series ICeGaN™
Package/Case 16-PowerVDFN
Packaging Cut Tape (CT)
Product Status Active
FET Type -
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 77mOhm @ 2.2A, 12V
Vgs(th) (Max) @ Id 4.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 12 V
Vgs (Max) +20V, -1V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature Current Sensing
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 16-DFN (8x8)
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