Diodes Incorporated ZXMC3A17DN8TC

Part No.:
ZXMC3A17DN8TC
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
IC-MAX.COMZXMC3A17DN8TC.pdf
Description:
MOSFET N/P-CH 30V 4.1A/3.4A 8SO
Quantity:

Unit Price:$0

Ext Price:$0

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ZXMC3A17DN8TC Information

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Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
4.1A, 3.4A
Rds On (Max) @ Id, Vgs:
50mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:
12.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
600pF @ 25V
Power - Max:
1.25W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO
Datasheet:
IC-MAX.COMZXMC3A17DN8TC.pdf
Image ZXMC3A17DN8TC
Part Number ZXMC3A17DN8TC
Manufacturer Diodes Incorporated
Series -
Package/Case 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR)
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4.1A, 3.4A
Rds On (Max) @ Id, Vgs 50mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 12.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V
Power - Max 1.25W
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SO
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