GeneSiC Semiconductor GD2X30MPS12D
- Part No.:
- GD2X30MPS12D
- Manufacturer:
- GeneSiC Semiconductor
- Category:
- Diode Arrays
- Package:
- TO-247-3
- Datasheet:
-
GD2X30MPS12D.pdf
- Description:
- DIODE ARR SIC 1200V 55A TO247-3
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
GD2X30MPS12D Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- GeneSiC Semiconductor
- Series:
- SiC Schottky MPS™
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io) (per Diode):
- 55A (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.8 V @ 30 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 20 µA @ 1200 V
- Operating Temperature - Junction:
- -55°C ~ 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-3
- Datasheet:
-
GD2X30MPS12D.pdf
| Image |  |
| Part Number | GD2X30MPS12D |
| Manufacturer | GeneSiC Semiconductor |
| Series | SiC Schottky MPS™ |
| Package/Case | TO-247-3 |
| Packaging | Tube |
| Product Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) (per Diode) | 55A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 30 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 20 µA @ 1200 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
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