Goford Semiconductor 2302

Part No.:
2302
Manufacturer:
Goford Semiconductor
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
IC-MAX.COM2302.pdf
Description:
MOSFET N-CH 20V 4.3A SOT-23
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Unit Price:$0

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2302 Information

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Manufacturer:
Goford Semiconductor
Series:
TrenchFET®
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Cut Tape (CT)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
27mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
4 nC @ 4.5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
356 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Datasheet:
IC-MAX.COM2302.pdf
Image 2302 2302
Part Number 2302 2302
Manufacturer Goford Semiconductor Goford Semiconductor
Series TrenchFET® TrenchFET®
Package/Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Packaging Cut Tape (CT) Tape & Reel (TR)
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc) 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 27mOhm @ 2.2A, 4.5V 27mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4 nC @ 4.5 V -
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 356 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 1W (Tc) 1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
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