Goford Semiconductor 630A
- Part No.:
- 630A
- Manufacturer:
- Goford Semiconductor
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
630A.pdf
- Description:
- N200V,RD(MAX)<280M@10V,VTH1V~3V,
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
630A Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Goford Semiconductor
- Series:
- TrenchFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Cut Tape (CT)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 250mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 510 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252
- Datasheet:
-
630A.pdf
| Image |  |
|
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| Part Number | 630A | 630A | 630AT |
| Manufacturer | Goford Semiconductor | Goford Semiconductor | Goford Semiconductor |
| Series | TrenchFET® | TrenchFET® | TrenchFET® |
| Package/Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-220-3 |
| Packaging | Tape & Reel (TR) | Cut Tape (CT) | Tube |
| Product Status | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | - | 200 V | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) | 11A (Tc) | 9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.5A, 10V | 250mOhm @ 4.5A, 10V | 250mOhm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA | 2V @ 250µA | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | - | 12 nC @ 10 V | 11.8 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | - | 510 pF @ 25 V | 509 pF @ 25 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 83W (Tc) | 83W (Tc) | 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Grade | - | - | - |
| Qualification | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Through Hole |
| Supplier Device Package | TO-252 | TO-252 | TO-220 |
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