Goford Semiconductor G1K8P06S2

Part No.:
G1K8P06S2
Manufacturer:
Goford Semiconductor
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
IC-MAX.COMG1K8P06S2.pdf
Description:
MOSFET 2P-CH 60V 3.2A 8SOP
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G1K8P06S2 Information

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Manufacturer:
Goford Semiconductor
Series:
TrenchFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Cut Tape (CT)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
3.2A (Tc)
Rds On (Max) @ Id, Vgs:
170mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
594pF @ 30V
Power - Max:
2W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOP
Datasheet:
IC-MAX.COMG1K8P06S2.pdf
Image G1K8P06S2 G1K8P06S2
Part Number G1K8P06S2 G1K8P06S2
Manufacturer Goford Semiconductor Goford Semiconductor
Series TrenchFET® TrenchFET®
Package/Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Packaging Cut Tape (CT) Tape & Reel (TR)
Product Status Active Active
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 P-Channel -
FET Feature - -
Drain to Source Voltage (Vdss) 60V 60V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc) 3.2A (Tc)
Rds On (Max) @ Id, Vgs 170mOhm @ 1A, 10V 170mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 10V 11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 594pF @ 30V 594pF @ 30V
Power - Max 2W (Tc) 2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOP 8-SOP
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