Goford Semiconductor G33N03S

Part No.:
G33N03S
Manufacturer:
Goford Semiconductor
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
IC-MAX.COMG33N03S.pdf
Description:
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
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G33N03S Information

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Attribute value
Manufacturer:
Goford Semiconductor
Series:
TrenchFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Cut Tape (CT)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
12mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 15 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1550 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOP
Datasheet:
IC-MAX.COMG33N03S.pdf
Image G33N03S G33N03S
Part Number G33N03S G33N03S
Manufacturer Goford Semiconductor Goford Semiconductor
Series TrenchFET® TrenchFET®
Package/Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Packaging Cut Tape (CT) Tape & Reel (TR)
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V -
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 8A, 10V 12mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 15 V -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1550 pF @ 15 V -
FET Feature - -
Power Dissipation (Max) 2.5W (Tc) 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOP 8-SOP
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