Goford Semiconductor G45P40T

Part No.:
G45P40T
Manufacturer:
Goford Semiconductor
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
IC-MAX.COMG45P40T.pdf
Description:
MOSFET, P-CH, 40V,45A,TO-220
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Unit Price:$0

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G45P40T Information

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Product attributes
Attribute value
Manufacturer:
Goford Semiconductor
Series:
TrenchFET®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
16mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
42 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3269 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
80W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220
Datasheet:
IC-MAX.COMG45P40T.pdf
Image G45P40T G45P40T
Part Number G45P40T G45P40T
Manufacturer Goford Semiconductor Goford Semiconductor
Series TrenchFET® TrenchFET®
Package/Case TO-220-3 TO-220-3
Packaging Tube Tube
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 40 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc) 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 30A, 10V 16mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 42 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 3269 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 80W (Tc) 80W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
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