Goford Semiconductor G66

Part No.:
G66
Manufacturer:
Goford Semiconductor
Category:
FETs, MOSFETs
Package:
6-WDFN Exposed Pad
Datasheet:
IC-MAX.COMG66.pdf
Description:
P-16V,-5.8A,RD(MAX)<[email protected],VT
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Unit Price:$0

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G66 Information

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Product attributes
Attribute value
Manufacturer:
Goford Semiconductor
Series:
TrenchFET®
Package/Case:
6-WDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
16 V
Current - Continuous Drain (Id) @ 25°C:
5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
45mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
7.8 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
740 pF @ 4 V
FET Feature:
-
Power Dissipation (Max):
1.7W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-DFN (2x2)
Datasheet:
IC-MAX.COMG66.pdf
Image G66 G66
Part Number G66 G66
Manufacturer Goford Semiconductor Goford Semiconductor
Series TrenchFET® TrenchFET®
Package/Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 16 V -
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc) 5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 45mOhm @ 4.1A, 4.5V 45mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.8 nC @ 4.5 V -
Vgs (Max) ±12V ±8V
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 4 V -
FET Feature - -
Power Dissipation (Max) 1.7W (Tc) 1.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-DFN (2x2) 6-DFN (2x2)
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