Goford Semiconductor GT090N06D52

Part No.:
GT090N06D52
Manufacturer:
Goford Semiconductor
Category:
FET, MOSFET Arrays
Package:
8-PowerTDFN
Datasheet:
IC-MAX.COMGT090N06D52.pdf
Description:
MOSFET 2N-CH 60V 40A 8DFN
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Unit Price:$0

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GT090N06D52 Information

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Manufacturer:
Goford Semiconductor
Series:
SGT
Package/Case:
8-PowerTDFN
Packaging:
Cut Tape (CT)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Rds On (Max) @ Id, Vgs:
14mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1011pF @ 30V
Power - Max:
62W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (4.9x5.75)
Datasheet:
IC-MAX.COMGT090N06D52.pdf
Image GT090N06D52 GT090N06D52
Part Number GT090N06D52 GT090N06D52
Manufacturer Goford Semiconductor Goford Semiconductor
Series SGT SGT
Package/Case 8-PowerTDFN 8-PowerTDFN
Packaging Tape & Reel (TR) Cut Tape (CT)
Product Status Active Active
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration - 2 N-Channel (Dual)
FET Feature - -
Drain to Source Voltage (Vdss) 60V 60V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 40A (Tc)
Rds On (Max) @ Id, Vgs 14mOhm @ 14A, 10V 14mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1011pF @ 30V 1011pF @ 30V
Power - Max 62W (Tc) 62W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-DFN (4.9x5.75) 8-DFN (4.9x5.75)
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