Goford Semiconductor GT130N10D3

Part No.:
GT130N10D3
Manufacturer:
Goford Semiconductor
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
IC-MAX.COMGT130N10D3.pdf
Description:
MOSFET N-CH 100V 52A DFN3*3-8L
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Unit Price:$0

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GT130N10D3 Information

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Manufacturer:
Goford Semiconductor
Series:
SGT
Package/Case:
8-PowerVDFN
Packaging:
Cut Tape (CT)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
12.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1254 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
71W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (3.15x3.05)
Datasheet:
IC-MAX.COMGT130N10D3.pdf
Image GT130N10D3 GT130N10D3
Part Number GT130N10D3 GT130N10D3
Manufacturer Goford Semiconductor Goford Semiconductor
Series SGT -
Package/Case 8-PowerVDFN 8-PowerVDFN
Packaging Cut Tape (CT) Tape & Reel (TR)
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 52A (Tc) 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 12.5mOhm @ 20A, 10V 12.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 18 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1254 pF @ 50 V 1254 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 71W (Tc) 71W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-DFN (3.15x3.05) 8-DFN (3.15x3.05)
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