Infineon Technologies IPB057N06NATMA1

Part No.:
IPB057N06NATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
IC-MAX.COMIPB057N06NATMA1.pdf
Description:
MOSFET N-CH 60V 17A/45A D2PAK
Quantity:

Unit Price:$0

Ext Price:$0

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IPB057N06NATMA1 Information

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Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
17A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
5.7mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:
2.8V @ 36µA
Gate Charge (Qg) (Max) @ Vgs:
27 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2000 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
3W (Ta), 83W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3
Datasheet:
IC-MAX.COMIPB057N06NATMA1.pdf
Image IPB057N06NATMA1
Part Number IPB057N06NATMA1
Manufacturer Infineon Technologies
Series OptiMOS™
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 17A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 2.8V @ 36µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 30 V
FET Feature -
Power Dissipation (Max) 3W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
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