Infineon Technologies IPB65R190CFD7AATMA1

Part No.:
IPB65R190CFD7AATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
IC-MAX.COMIPB65R190CFD7AATMA1.pdf
Description:
MOSFET N-CH 650V 14A TO263-3
Quantity:

Unit Price:$0

Ext Price:$0

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IPB65R190CFD7AATMA1 Information

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Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
190mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs:
28 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1291 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
77W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3
Datasheet:
IC-MAX.COMIPB65R190CFD7AATMA1.pdf
Image IPB65R190CFD7AATMA1
Part Number IPB65R190CFD7AATMA1
Manufacturer Infineon Technologies
Series CoolMOS™
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 190mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1291 pF @ 400 V
FET Feature -
Power Dissipation (Max) 77W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
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