Infineon Technologies IPG20N04S409ATMA1

Part No.:
IPG20N04S409ATMA1
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-PowerTDFN
Datasheet:
IC-MAX.COMIPG20N04S409ATMA1.pdf
Description:
MOSFET 2N-CH 40V 20A 8TDSON
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Unit Price:$0

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IPG20N04S409ATMA1 Information

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Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Rds On (Max) @ Id, Vgs:
8.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:
4V @ 22µA
Gate Charge (Qg) (Max) @ Vgs:
28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
2250pF @ 25V
Power - Max:
54W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8
Datasheet:
IC-MAX.COMIPG20N04S409ATMA1.pdf
Image IPG20N04S409ATMA1
Part Number IPG20N04S409ATMA1
Manufacturer Infineon Technologies
Series OptiMOS™
Package/Case 8-PowerTDFN
Packaging Tape & Reel (TR)
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Rds On (Max) @ Id, Vgs 8.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 22µA
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 25V
Power - Max 54W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
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