Infineon Technologies IPI086N10N3GXKSA1

Part No.:
IPI086N10N3GXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
IC-MAX.COMIPI086N10N3GXKSA1.pdf
Description:
MOSFET N-CH 100V 80A TO262-3
Quantity:

Unit Price:$0

Ext Price:$0

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IPI086N10N3GXKSA1 Information

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Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
8.6mOhm @ 73A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs:
55 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3980 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
125W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO262-3
Datasheet:
IC-MAX.COMIPI086N10N3GXKSA1.pdf
Image IPI086N10N3GXKSA1
Part Number IPI086N10N3GXKSA1
Manufacturer Infineon Technologies
Series OptiMOS™
Package/Case TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 8.6mOhm @ 73A, 10V
Vgs(th) (Max) @ Id 3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3980 pF @ 50 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
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