Infineon Technologies IPP60R299CPXKSA1

Part No.:
IPP60R299CPXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
IC-MAX.COMIPP60R299CPXKSA1.pdf
Description:
MOSFET N-CH 650V 11A TO220-3
Quantity:

Unit Price:$0

Ext Price:$0

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IPP60R299CPXKSA1 Information

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Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Not For New Designs
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1100 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
96W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3
Datasheet:
IC-MAX.COMIPP60R299CPXKSA1.pdf
Image IPP60R299CPXKSA1
Part Number IPP60R299CPXKSA1
Manufacturer Infineon Technologies
Series CoolMOS™
Package/Case TO-220-3
Packaging Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
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