Infineon Technologies IRF9910TRPBF

Part No.:
IRF9910TRPBF
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
IC-MAX.COMIRF9910TRPBF.pdf
Description:
MOSFET 2N-CH 20V 10A/12A 8SO
Quantity:

Unit Price:$0

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IRF9910TRPBF Information

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Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
10A, 12A
Rds On (Max) @ Id, Vgs:
9.3mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:
2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
900pF @ 10V
Power - Max:
2W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO
Datasheet:
IC-MAX.COMIRF9910TRPBF.pdf
Image IRF9910TRPBF IRF9910TRPBF-1
Part Number IRF9910TRPBF IRF9910TRPBF-1
Manufacturer Infineon Technologies Infineon Technologies
Series HEXFET® HEXFET®
Package/Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Obsolete Obsolete
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate -
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) @ 25°C 10A, 12A 10A (Ta), 12A (Ta)
Rds On (Max) @ Id, Vgs 9.3mOhm @ 12A, 10V 13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250µA 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V 11nC @ 4.5V, 23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V 900pF @ 10V, 1860pF @ 10V
Power - Max 2W 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SOIC
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