Infineon Technologies IRFB7540PBF

Part No.:
IRFB7540PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
IC-MAX.COMIRFB7540PBF.pdf
Description:
MOSFET N-CH 60V 110A TO220
Quantity:

Unit Price:$0

Ext Price:$0

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IRFB7540PBF Information

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Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®, StrongIRFET™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
5.1mOhm @ 65A, 10V
Vgs(th) (Max) @ Id:
3.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4555 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
160W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220
Datasheet:
IC-MAX.COMIRFB7540PBF.pdf
Image IRFB7540PBF
Part Number IRFB7540PBF
Manufacturer Infineon Technologies
Series HEXFET®, StrongIRFET™
Package/Case TO-220-3
Packaging Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 5.1mOhm @ 65A, 10V
Vgs(th) (Max) @ Id 3.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4555 pF @ 25 V
FET Feature -
Power Dissipation (Max) 160W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220
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