Infineon Technologies IRFH8311TRPBF

Part No.:
IRFH8311TRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-TQFN Exposed Pad
Datasheet:
IC-MAX.COMIRFH8311TRPBF.pdf
Description:
MOSFET N CH 30V 32A PQFN5X6
Quantity:

Unit Price:$0

Ext Price:$0

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IRFH8311TRPBF Information

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Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-TQFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
32A (Ta), 169A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
2.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
66 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4960 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
3.6W (Ta), 96W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PQFN (5x6)
Datasheet:
IC-MAX.COMIRFH8311TRPBF.pdf
Image IRFH8311TRPBF
Part Number IRFH8311TRPBF
Manufacturer Infineon Technologies
Series HEXFET®
Package/Case 8-TQFN Exposed Pad
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 169A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4960 pF @ 10 V
FET Feature -
Power Dissipation (Max) 3.6W (Ta), 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PQFN (5x6)
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Step1:Prepare product
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