Infineon Technologies IRLR3636TRLPBF

Part No.:
IRLR3636TRLPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
IC-MAX.COMIRLR3636TRLPBF.pdf
Description:
MOSFET N-CH 60V 50A DPAK
Quantity:

Unit Price:$0

Ext Price:$0

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IRLR3636TRLPBF Information

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Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
49 nC @ 4.5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
3779 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
143W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)
Datasheet:
IC-MAX.COMIRLR3636TRLPBF.pdf
Image IRLR3636TRLPBF
Part Number IRLR3636TRLPBF
Manufacturer Infineon Technologies
Series HEXFET®
Package/Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 4.5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 3779 pF @ 50 V
FET Feature -
Power Dissipation (Max) 143W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-252AA (DPAK)
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