Infineon Technologies ITD50N04S4L07ATMA1

Part No.:
ITD50N04S4L07ATMA1
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Datasheet:
IC-MAX.COMITD50N04S4L07ATMA1.pdf
Description:
MOSFET 2N-CH 40V 50A TO252-5
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Unit Price:$0

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ITD50N04S4L07ATMA1 Information

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Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel, Common Drain
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Rds On (Max) @ Id, Vgs:
7.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 18µA
Gate Charge (Qg) (Max) @ Vgs:
33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
2480pF @ 25V
Power - Max:
46W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-5-311
Datasheet:
IC-MAX.COMITD50N04S4L07ATMA1.pdf
Image ITD50N04S4L07ATMA1
Part Number ITD50N04S4L07ATMA1
Manufacturer Infineon Technologies
Series OptiMOS™
Package/Case TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel, Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Rds On (Max) @ Id, Vgs 7.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.2V @ 18µA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2480pF @ 25V
Power - Max 46W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q100
Mounting Type Surface Mount
Supplier Device Package PG-TO252-5-311
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