Microchip Technology APT30GP60BDQ1G

Part No.:
APT30GP60BDQ1G
Manufacturer:
Microchip Technology
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
IC-MAX.COMAPT30GP60BDQ1G.pdf
Description:
IGBT PT 600V 100A TO247
Quantity:

Unit Price:$0

Ext Price:$0

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APT30GP60BDQ1G Information

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Manufacturer:
Microchip Technology
Series:
POWER MOS 7®
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
PT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
100 A
Current - Collector Pulsed (Icm):
120 A
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 30A
Power - Max:
463 W
Switching Energy:
260µJ (on), 250µJ (off)
Input Type:
Standard
Gate Charge:
90 nC
Td (on/off) @ 25°C:
13ns/55ns
Test Condition:
400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247 [B]
Datasheet:
IC-MAX.COMAPT30GP60BDQ1G.pdf
Image APT30GP60BDQ1G
Part Number APT30GP60BDQ1G
Manufacturer Microchip Technology
Series POWER MOS 7®
Package/Case TO-247-3
Packaging Tube
Product Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 100 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 30A
Power - Max 463 W
Switching Energy 260µJ (on), 250µJ (off)
Input Type Standard
Gate Charge 90 nC
Td (on/off) @ 25°C 13ns/55ns
Test Condition 400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247 [B]
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