Microchip Technology APTM100H18FG
- Part No.:
- APTM100H18FG
- Manufacturer:
- Microchip Technology
- Category:
- FET, MOSFET Arrays
- Package:
- SP6
- Datasheet:
-
APTM100H18FG.pdf
- Description:
- MOSFET 4N-CH 1000V 43A SP6
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
APTM100H18FG Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SP6
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 4 N-Channel (Full Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C:
- 43A
- Rds On (Max) @ Id, Vgs:
- 210mOhm @ 21.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs:
- 372nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 10400pF @ 25V
- Power - Max:
- 780W
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- SP6
- Datasheet:
-
APTM100H18FG.pdf
| Image |  |
| Part Number | APTM100H18FG |
| Manufacturer | Microchip Technology |
| Series | - |
| Package/Case | SP6 |
| Packaging | Bulk |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 4 N-Channel (Full Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 43A |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 21.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 372nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 10400pF @ 25V |
| Power - Max | 780W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SP6 |
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