Microchip Technology APTM120H140FT1G

Part No.:
APTM120H140FT1G
Manufacturer:
Microchip Technology
Category:
FET, MOSFET Arrays
Package:
SP1
Datasheet:
IC-MAX.COMAPTM120H140FT1G.pdf
Description:
MOSFET 4N-CH 1200V 8A SP1
Quantity:

Unit Price:$0

Ext Price:$0

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APTM120H140FT1G Information

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Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SP1
Packaging:
Bulk
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
4 N-Channel (Full Bridge)
FET Feature:
-
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
8A
Rds On (Max) @ Id, Vgs:
1.68Ohm @ 7A, 10V
Vgs(th) (Max) @ Id:
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
145nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
3812pF @ 25V
Power - Max:
208W
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
SP1
Datasheet:
IC-MAX.COMAPTM120H140FT1G.pdf
Image APTM120H140FT1G
Part Number APTM120H140FT1G
Manufacturer Microchip Technology
Series -
Package/Case SP1
Packaging Bulk
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 4 N-Channel (Full Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 8A
Rds On (Max) @ Id, Vgs 1.68Ohm @ 7A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3812pF @ 25V
Power - Max 208W
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Supplier Device Package SP1
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