Microchip Technology APTMC60TL11CT3AG

Part No.:
APTMC60TL11CT3AG
Manufacturer:
Microchip Technology
Category:
FET, MOSFET Arrays
Package:
SP3
Datasheet:
IC-MAX.COMAPTMC60TL11CT3AG.pdf
Description:
MOSFET 4N-CH 1200V 28A SP3
Quantity:

Unit Price:$0

Ext Price:$0

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APTMC60TL11CT3AG Information

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Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SP3
Packaging:
Bulk
Product Status:
Active
Technology:
Silicon Carbide (SiC)
Configuration:
4 N-Channel (Three Level Inverter)
FET Feature:
-
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
28A (Tc)
Rds On (Max) @ Id, Vgs:
98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:
2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
49nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:
950pF @ 1000V
Power - Max:
125W
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
SP3
Datasheet:
IC-MAX.COMAPTMC60TL11CT3AG.pdf
Image APTMC60TL11CT3AG
Part Number APTMC60TL11CT3AG
Manufacturer Microchip Technology
Series -
Package/Case SP3
Packaging Bulk
Product Status Active
Technology Silicon Carbide (SiC)
Configuration 4 N-Channel (Three Level Inverter)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Rds On (Max) @ Id, Vgs 98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 49nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 1000V
Power - Max 125W
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Supplier Device Package SP3
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