Microchip Technology JANTX1N6779
- Part No.:
- JANTX1N6779
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- TO-257-3
- Description:
- DIODE GEN PURP 600V 15A TO257
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
JANTX1N6779 Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- TO-257-3
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 15A
- Voltage - Forward (Vf) (Max) @ If:
- 1.6 V @ 15 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 60 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 480 V
- Capacitance @ Vr, F:
- 300pF @ 5V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/647
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-257
- Operating Temperature - Junction:
- 150°C (Max)
| Image |  |
| Part Number | JANTX1N6779 |
| Manufacturer | Microchip Technology |
| Series | - |
| Package/Case | TO-257-3 |
| Packaging | Bulk |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 15A |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 15 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 60 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 480 V |
| Capacitance @ Vr, F | 300pF @ 5V, 1MHz |
| Grade | Military |
| Qualification | MIL-PRF-19500/647 |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-257 |
| Operating Temperature - Junction | 150°C (Max) |
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