Monolithic Power Systems Inc. LN60A01ES-LF-Z

Part No.:
LN60A01ES-LF-Z
Manufacturer:
Monolithic Power Systems Inc.
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
IC-MAX.COMLN60A01ES-LF-Z.pdf
Description:
MOSFET 3N-CH 600V 0.08A 8SOIC
Quantity:

Unit Price:$0

Ext Price:$0

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LN60A01ES-LF-Z Information

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Manufacturer:
Monolithic Power Systems Inc.
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
3 N-Channel, Common Gate
FET Feature:
-
Drain to Source Voltage (Vdss):
600V
Current - Continuous Drain (Id) @ 25°C:
80mA
Rds On (Max) @ Id, Vgs:
190Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
1.3W
Operating Temperature:
-20°C ~ 125°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Datasheet:
IC-MAX.COMLN60A01ES-LF-Z.pdf
Image LN60A01ES-LF LN60A01ES-LF-Z
Part Number LN60A01ES-LF LN60A01ES-LF-Z
Manufacturer Monolithic Power Systems Inc. Monolithic Power Systems Inc.
Series - -
Package/Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Packaging Tube Tape & Reel (TR)
Product Status Active Obsolete
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 3 N-Channel, Common Gate 3 N-Channel, Common Gate
FET Feature - -
Drain to Source Voltage (Vdss) 600V 600V
Current - Continuous Drain (Id) @ 25°C 80mA 80mA
Rds On (Max) @ Id, Vgs 190Ohm @ 10mA, 10V 190Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Input Capacitance (Ciss) (Max) @ Vds - -
Power - Max 1.3W 1.3W
Operating Temperature -20°C ~ 125°C (TJ) -20°C ~ 125°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
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