Nexperia USA Inc. PHKD13N03LT,118

Part No.:
PHKD13N03LT,118
Manufacturer:
Nexperia USA Inc.
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
IC-MAX.COMPHKD13N03LT,118.pdf
Description:
MOSFET 2N-CH 30V 10.4A 8SO
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PHKD13N03LT,118 Information

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Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
10.4A
Rds On (Max) @ Id, Vgs:
20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
10.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:
752pF @ 15V
Power - Max:
3.57W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO
Datasheet:
IC-MAX.COMPHKD13N03LT,118.pdf
Image PHKD13N03LT,118 PHKD13N03LT,518
Part Number PHKD13N03LT,118 PHKD13N03LT,518
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Series TrenchMOS™ TrenchMOS™
Package/Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Obsolete Obsolete
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 10.4A 10.4A
Rds On (Max) @ Id, Vgs 20mOhm @ 8A, 10V 20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.7nC @ 5V 10.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 752pF @ 15V 752pF @ 15V
Power - Max 3.57W 3.57W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
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