NXP Semiconductors BUK7509-55A,127

Part No.:
BUK7509-55A,127
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
IC-MAX.COMBUK7509-55A,127.pdf
Description:
NEXPERIA BUK7509-55A - 75A, 55V,
Quantity:

Unit Price:$0

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BUK7509-55A,127 Information

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Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
TrenchMOS™
Package/Case:
TO-220-3
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
62 nC @ 0 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3271 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
211W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Datasheet:
IC-MAX.COMBUK7509-55A,127.pdf
Image BUK7509-55A,127 BUK7509-75A,127
Part Number BUK7509-55A,127 BUK7509-75A,127
Manufacturer NXP Semiconductors NXP USA Inc.
Series TrenchMOS™ *
Package/Case TO-220-3 -
Packaging Bulk Tube
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 55 V -
Current - Continuous Drain (Id) @ 25°C 75A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 9mOhm @ 25A, 10V -
Vgs(th) (Max) @ Id 4V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 0 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 3271 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 211W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Grade Automotive -
Qualification AEC-Q101 -
Mounting Type Through Hole -
Supplier Device Package TO-220AB -
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