NXP USA Inc. PHB23NQ10LT,118

Part No.:
PHB23NQ10LT,118
Manufacturer:
NXP USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
IC-MAX.COMPHB23NQ10LT,118.pdf
Description:
MOSFET N-CH 100V 23A D2PAK
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Unit Price:$0

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PHB23NQ10LT,118 Information

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Attribute value
Manufacturer:
NXP USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
72mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
49 nC @ 10 V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
1704 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
98W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Datasheet:
IC-MAX.COMPHB23NQ10LT,118.pdf
Image PHB23NQ10LT,118
Part Number PHB23NQ10LT,118
Manufacturer NXP USA Inc.
Series TrenchMOS™
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 1704 pF @ 25 V
FET Feature -
Power Dissipation (Max) 98W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package D2PAK
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