NXP USA Inc. PSMN8R5-100ESQ
- Part No.:
- PSMN8R5-100ESQ
- Manufacturer:
- NXP USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
PSMN8R5-100ESQ.pdf
- Description:
- POWER FIELD-EFFECT TRANSISTOR, 1
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
PSMN8R5-100ESQ Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- NXP USA Inc.
- Series:
- -
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 111 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5512 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 263W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
- Datasheet:
-
PSMN8R5-100ESQ.pdf
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| Part Number | PSMN8R5-100ESQ | PSMN8R5-100ESFQ | PSMN8R5-100XSQ | PSMN8R5-108ESQ |
| Manufacturer | NXP USA Inc. | NXP Semiconductors | NXP USA Inc. | NXP USA Inc. |
| Series | - | - | - | - |
| Package/Case | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-220-3 Full Pack, Isolated Tab | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Packaging | Bulk | Bulk | Tube | Tube |
| Product Status | Active | Active | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V | 100 V | 108 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tj) | 97A (Ta) | 49A (Tj) | 100A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 7V, 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 25A, 10V | 8.8mOhm @ 25A, 10V | 8.5mOhm @ 10A, 10V | 8.5mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA | 4V @ 1mA | 4V @ 1mA | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 111 nC @ 10 V | 44.5 nC @ 10 V | 100 nC @ 10 V | 111 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5512 pF @ 50 V | 3181 pF @ 50 V | 5512 pF @ 50 V | 5512 pF @ 50 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 263W (Tc) | 183W (Ta) | 55W (Tc) | 263W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Grade | - | - | - | - |
| Qualification | - | - | - | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | I2PAK | I2PAK | TO-220F | I2PAK |
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