onsemi FDMS3660S

Part No.:
FDMS3660S
Manufacturer:
onsemi
Category:
FET, MOSFET Arrays
Package:
8-PowerTDFN
Datasheet:
IC-MAX.COMFDMS3660S.pdf
Description:
MOSFET 2N-CH 30V 30A/60A POWER56
Quantity:

Unit Price:$0

Ext Price:$0

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FDMS3660S Information

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Manufacturer:
onsemi
Series:
PowerTrench®
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual) Asymmetrical
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
30A, 60A
Rds On (Max) @ Id, Vgs:
8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:
2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1765pF @ 15V
Power - Max:
1W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Power56
Datasheet:
IC-MAX.COMFDMS3660S.pdf
Image FDMS3660S FDMS3660S-F121
Part Number FDMS3660S FDMS3660S-F121
Manufacturer onsemi onsemi
Series PowerTrench® PowerTrench®
Package/Case 8-PowerTDFN 8-PowerTDFN
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Obsolete
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 30A, 60A 13A, 30A
Rds On (Max) @ Id, Vgs 8mOhm @ 13A, 10V 8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1765pF @ 15V 1765pF @ 15V
Power - Max 1W 1W
Operating Temperature -55°C ~ 150°C (TJ) -
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package Power56 Power56
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